Dispersion of nonresonant third-order nonlinearities in GeSiSn ternary alloys
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چکیده
منابع مشابه
Dispersion of nonresonant third-order nonlinearities in GeSiSn ternary alloys
Silicon (Si), tin (Sn), and germanium (Ge) alloys have attracted research attention as direct band gap semiconductors with applications in electronics and optoelectronics. In particular, GeSn field effect transistors can exhibit very high performance in terms of power reduction and operating speed because of the high electron drift mobility, while the SiGeSn system can be constructed using CMOS...
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(,) 2 1 () () g in cn E E E E E E cn g in p h c n g in ph 1 2 7/2 , 1/2 2 2 () ()() 2 1/2 2 1 2 , 2 2 1 2 , 2 g in p h p h g in ph g in (,) 2 1 () () g in cn E E E E E E cn g in p h c n g in ph 1 2 7/2 , 1/2 2 2 () () 2 1/2 2 1 2 , 2 2 1 2 , 2 g in p h p h g in ph g in 1 2 , 3/2 1 2 , 1 2 , In Equation 14, ω ω π ω ω ω ω (,) 2 1 () () g in cn E E E E E E cn g in p h c n g in ph 1 2 7/2 , 1/2 2 2...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2016
ISSN: 2045-2322
DOI: 10.1038/srep32622